Samsung Electronics world premieres HBM4E 12-layer sample with maximum speed of 16Gbps

[ Gearbest Technology News]On May 29, Samsung Electronics announced that it has supplied the world’s first HBM4E 12-layer sample to global customers, further promoting the layout of next-generation high-bandwidth memory products. Previously, Samsung had launched HBM4 mass production and shipment in February this year. This time it provided HBM4E samples a few months later, which means that it is accelerating the pace of product advancement for the AI ​​infrastructure market.

It is understood that after design and process optimization of this HBM4E 12-layer product, the single-pin transmission rate can be increased from 14Gbps to a maximum of 16Gbps, which is more than 20% higher than the previous generation HBM4. In terms of bandwidth, a single stack can provide 3.6TB of data throughput per second, which can be used for the high-intensity computing needs of large language models and next-generation AI systems.

In terms of capacity, the HBM4E 12-layer product achieves a capacity of 48GB, which is more than 30% higher than the previous generation. According to the plan, Samsung will also expand the 32GB 8-layer version and the 64GB 16-layer version to adapt to different customer application scenarios.

Samsung said that HBM4E uses the process that has been verified on HBM4, that is, 10-nanometer sixth-generation DRAM, combined with its own 4-nanometer logic chip. The company said this combination helps improve the stability of advanced processes and balances yield and mass production capabilities. At the same time, the product also improves energy efficiency by 16% compared with the previous generation through low-power design and packaging structure optimization, and the thermal resistance characteristics are improved by more than 14%.

According to the plan, Samsung will promote mass production and supply according to customer schedules based on this sample supply. As a background, Samsung has achieved mass production and shipment of HBM4 in February this year. The company said that customer feedback on HBM4's speed and power consumption performance has been relatively positive. In December last year, HBM4 reached 11.7Gbps in the SiP test and received a high-level rating. Since HBM4 and HBM4E use the same 1c DRAM and 4nm basic chip combination, the industry is also paying attention to the subsequent progress of HBM4E in mass production.