Samsung is advancing the research and development of seventh-generation 10nm-level 1d DRAM to prepare for mass production next year

[ Gearbest Technology News]On June 17, GearbestTechnology learned from Korean media that Samsung is advancing preparations for mass production of 10-nanometer seventh-generation, 1d DRAM. Currently, the company is working with multiple suppliers to develop related production equipment and plans to introduce these equipment as early as the second quarter of next year.

Samsung
Samsung

The circuit width of 1d DRAM is about 10 to 11 nanometers. By comparison, the circuit width of currently commercially available sixth-generation 1c DRAM is about 11 to 12 nanometers. By further shrinking the circuit width, the new generation of DRAM will improve performance and energy efficiency.

There has been speculation in the market that Samsung may start mass production of 1d DRAM this year, but considering that the relevant core production equipment is still in the development stage, this goal is considered difficult to achieve. Industry analysts believe that considering the debugging and mass production preparation cycles after equipment introduction, Samsung is expected to achieve initial mass production of 1d DRAM as early as the end of next year.

Samsung Pyeongtaek Factory
Samsung Pyeongtaek Factory

Relevant people in the semiconductor industry said that Samsung is currently actively conducting research and development with major partners to ensure the yield and stable performance of 1d DRAM. Although the specific timetable may be adjusted according to the progress of research and development, the current goal is to introduce mass production equipment in the second or third quarter of next year. Another person familiar with the matter pointed out that 1d DRAM is Samsung’s internal development process project with rapid progress, and the relevant plans are expected to be further clarified by the end of this year.

Samsung’s 1D DRAM technology plays an important role in the future AI memory business. According to the plan, this technology is expected to be adopted as the core chip carrier of the ninth-generation high-bandwidth memory, HBM5E, which will be commercialized in 2029.

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